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| Title: | The effect of oxygen impurity on growth of molybdenum disilicide and its distribution during rapid thermal annealing of co-sputtered MoSix thin films |
| Authors: | Rastogi, R S
Vankar, V D
Chopra, K L |
| Keywords: | molybdenum and silicon targets
oxygen-contaminated films
polycrystalline silicon
amorphous phases
oxygen-free annealed films |
| Issue Date: | 1992 |
| Citation: | Thin Solid Films, 213(1), 45-54p. |
| Abstract: | Thin films of MoSix (with and without oxygen) were deposited by co-sputtering of molybdenum and silicon targets. As-deposited films were annealed in argon environment in the temperature range 700–1150 °C for 15–120 s. Rapid thermal annealing of oxygen-contaminated films at low temperature (700–800 °C) in an argon environment results in evolution of a mixture of MoSi2, Mo3Si3, polycrystalline silicon and amorphous phases. Subsequent annealing at higher temperature (above 800 °C) results in further growth of Mo5Si3, MoSi2 and polycrystalline silicon. At 1150 °C, a 15–120 s annealing time produces successive growth of tetragonal MoSi2 phase at the expense of Mo5Si3 and silicon. Auger electron spectroscopy depth profiles of annealed films indicate the accumulation of oxygen impurity at the MoSix---Si(crystalline) interface, which is initially distributed uniformly throughout the MoSix matrix. However, oxygen-free MoSix films do exhibit the growth of MoSi2 (both tetragonal and hexagonal) du... |
| URI: | http://eprint.iitd.ac.in/dspace/handle/2074/2521 |
| Appears in Collections: | Physics
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