EPrints@IIT Delhi : Item 2074/255

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DC Field	Value	Language
contributor.author	Mehta, B R	-
contributor.author	Sahay, M K	-
contributor.author	Malhotra, L K	-
contributor.author	Avasthi, D K	-
contributor.author	Soni, R K	-
date.accessioned	2005-06-06T13:37:33Z	-
date.available	2005-06-06T13:37:33Z	-
date.issued	1996	-
identifier.citation	Thin Solid Films,289,95-98	en
identifier.uri	http://eprint.iitd.ac.in/dspace/handle/2074/255	-
description.abstract	Anodically etched porous silicon samples have been irradiated with 85 MeV Ni ions. The ion irradiation results in a complete suppression of the major photolumincscence peak at 697 nm and the shoulder peak at 6.7 nm. In die ion-irradiated sample, the weak Pl peak, appears at 588 nm. Elastic recoil detection analysis has been used to study the changes in the hydrogen concentration profiles during ion irradiation. Infrared spectroscopy has been employed to investigate the effect of ion irradiation on the chemical species present in the porous silicon. The changes in the phntolumiuescence spectra have been correlated with the resulting changes in the concentration of hydrogen and chemical complexes containing Si, H and O in the porous silicon sample on irradiation.	en
format.extent	314658 bytes	-
format.mimetype	application/pdf	-
language.iso	en	-
subject	Luminescence	en
subject	Silicon	en
subject	Infrared spectroscopy	en
title	High energy heavy ion induced changes in the photoluminescence and chemical composition of porous silicon	en
type	Article	en
Appears in Collections:	Physics

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