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|Title: ||Sol gel deposition of pure and antimony doped tin dioxide thin films by non alkoxide precursors|
|Authors: ||Senguttuvan, T D|
Malhotra, L K
|Keywords: ||Deposition process|
Electrical properties and measurements
|Issue Date: ||1996|
|Citation: ||Thin solid films, 289(1-2), 22-28|
|Abstract: ||Pure and antimony doped tin oxide films have been deposited by the alcoholic sol gel method using non alkoxide precursor-SnCI2.2H20 as host and SbCI3 as the dopant precursor. Using the dip coating method, thin films of thickness up to 300 nm have been uniformly deposited on coming 7059, KBr and Silicon substrates. The influence of various paratneters such as viscosity and pH of the sol; pulling speed and sintering temperature on thickness of the coatings and their microstructure have been investigated. Pure as deposited films have a visible transmission of (83%) but very high resistivity (7. I X 10-2 fl-m). Doping and annealing treatments bring it down to about 5 × 10-1)-m.
It has been possible to obtain antimony doped tin oxide films having a sheet resistance of 5 fl/r-l and a visible transmission of 80% after
annealing treatment by hydrogen plasma.|
|Appears in Collections:||Physics|
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