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Please use this identifier to cite or link to this item:
http://hdl.handle.net/2074/286
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Full metadata record
| DC Field | Value | Language |
|---|
| contributor.author | Srinivas, G | - |
| contributor.author | Vankar, V D | - |
| date.accessioned | 2005-06-08T08:42:23Z | - |
| date.available | 2005-06-08T08:42:23Z | - |
| date.issued | 1996 | - |
| identifier.citation | Materials research bulletin,31(11),1331-1340 | en |
| identifier.uri | http://eprint.iitd.ac.in/dspace/handle/2074/286 | - |
| description.abstract | Systematic ellipsometric studies of MoSia tetragona1) thin films formed by RTA processing of cosputtered Mo25&i75, Mo30Si70 and Mo36&i64 thin films are discussed. The optical properties of these films in the measured spectral range 1.3-5.3 eV were observed to be dominated by the microstructural variations such as due to the changes in density, oxide overlayer thickness
and composition, surface roughness, and redistribution of available excess silicon (after formation of MoSiz (tetragonal) phase). These microstructural variations indicated modification of interfaces and significant change in conductivity, which were corroborated in the AES depth profiles and the electrical resistivity measurements. | en |
| format.extent | 689395 bytes | - |
| format.mimetype | application/pdf | - |
| language.iso | en | - |
| subject | thin films | en |
| subject | sputtering | en |
| subject | optical properties | en |
| title | Ellipsometric studies of polycrystalline molybdenum silicide thin films | en |
| type | Article | en |
| Appears in Collections: | Physics
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| File |
Description |
Size | Format |
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| srinivasell.pdf | | 673Kb | Adobe PDF | View/Open |
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