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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/312

Title: Raman spectroscopy of polycrystalline molybdenum silicide thin films
Authors: Srinivas, G
Vankar, V D
Keywords: Molybdenum silicide
Si substrate
Raman spectra
Issue Date: 1997
Citation: Materials Letters, 30(2-3), 209-215
Abstract: Polycrystalline molybdenum disilicide thin films have been prepared by RF magnetron co-sputtering of molybdenum andsilicon onto P-type silicon (100) substrates and annealing thereafter using RTA technique. Raman spectroscopy was used to study the microstructural details of these films. The Raman spectra clearly indicated the random distribution of excess silicon available after the formation of MoSi, (tetragonal) phase within the matrix at low annealing temperatures and its outdiffusion towards the substrate-film interface at higher annealing temperatures. The spectra also suggested a change in the nature of stress due to the outdiffusion of silicon.
URI: http://eprint.iitd.ac.in/dspace/handle/2074/312
Appears in Collections:Physics

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