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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/312

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dc.contributor.authorSrinivas, G-
dc.contributor.authorVankar, V D-
dc.date.accessioned2005-06-13T13:55:54Z-
dc.date.available2005-06-13T13:55:54Z-
dc.date.issued1997-
dc.identifier.citationMaterials Letters, 30(2-3), 209-215en
dc.identifier.urihttp://eprint.iitd.ac.in/dspace/handle/2074/312-
dc.description.abstractPolycrystalline molybdenum disilicide thin films have been prepared by RF magnetron co-sputtering of molybdenum andsilicon onto P-type silicon (100) substrates and annealing thereafter using RTA technique. Raman spectroscopy was used to study the microstructural details of these films. The Raman spectra clearly indicated the random distribution of excess silicon available after the formation of MoSi, (tetragonal) phase within the matrix at low annealing temperatures and its outdiffusion towards the substrate-film interface at higher annealing temperatures. The spectra also suggested a change in the nature of stress due to the outdiffusion of silicon.en
dc.format.extent196074 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoen-
dc.subjectMolybdenum silicideen
dc.subjectMoSi2en
dc.subjectFilmsen
dc.subjectSi substrateen
dc.subjectRaman spectraen
dc.titleRaman spectroscopy of polycrystalline molybdenum silicide thin filmsen
dc.typeArticleen
Appears in Collections:Physics

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