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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/320

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dc.contributor.authorSrinivas, G-
dc.contributor.authorVankar, V D-
dc.date.accessioned2005-06-14T04:08:32Z-
dc.date.available2005-06-14T04:08:32Z-
dc.date.issued1997-
dc.identifier.citationMaterials Letters, 30(1), 35-40en
dc.identifier.urihttp://eprint.iitd.ac.in/dspace/handle/2074/320-
dc.description.abstractThin films of compositions Mo,,Si,, and Mo,,Si,, were co-sputtered onto p-type silicon substrates and annealed using a rapid thermal annealing system. The spectroscopic ellipsometric studies were performed on samples which crystallized into the most stable MoSi, tetragonal phase. The Bruggeman effective medium theory in a multiphase-multilayer mode was used to determine the microstructural details of these films. The microstructural modelling results indicated varied fractions of silicon and voids randomly mixed in the matrix of MoSi a. It was also observed that the composition of the SiO,overlayeralso varied with changes in the annealing temperature and was found to depend on the starting composition.en
dc.format.extent191724 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoen-
dc.subjectMolybdenum silicideen
dc.subjectThin filmsen
dc.subjectSilicon substratesen
dc.subjectRTA annealingen
dc.subjectSpectroscopic ellipsometryen
dc.subjectMicrostructural modellingen
dc.subjectEffective medium approximationen
dc.titleMicrostructural studies of molybdenum silicide thin films by spectroscopic ellipsometryen
dc.typeArticleen
Appears in Collections:Physics

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