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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/359

Title: Photo-processing of silicon nitride
Authors: Rathi, V K
Gupta, Manju
Thangaraj, R
Chari, K S
Agnihotri, O P
Keywords: Photo-processing
Silicon nitrides
Chemical vapour deposition
semiconductor technology
Issue Date: 1995
Citation: Thin Solid Films 266 , 219-223
Abstract: Silicon nitride films were synthesized using the new process of photo-chemical vapour deposition (photo-CVD). Films of different compositions were prepared by mercury-sensitized photo-CVD using 2% silane and ammonia as reactant gases. Material properties of interest to device technology have been evaluated. Dependence of the properties of the films on the Si/N ratio and the amount of hydrogen present in the films is studied, and optimum growth conditions of deposition are identified. Studies of metal-insulators-semiconductor structures with the optimized photo nitride as an active dielectric showed fixed charge - 1.2 X 10 cm-2, mobile charge 3 X 10” cm-’ and midgap interface state density - 1.7 X 10” eV- 1 cm- 1 . indicating their potential for use in metal-organic-semiconductor technology. A limited comparison of data with direct photo-CVD is also given.
URI: http://eprint.iitd.ac.in/dspace/handle/2074/359
Appears in Collections:Physics

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