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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/60

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dc.contributor.authorSrinivas, G-
dc.contributor.authorVankar, V D-
dc.identifier.citationMaterials Research Bulletin, 31(11), 1331-1340.en
dc.description.abstractSystematic ellipsometric studies of MoSia(tetragona1) thin films formed by RTA processing of cosputtered Mo&i75, Mql&,, and Mo&ia thin films are discussed. The optical properties of these films in the measured spectral range 1.3-5.3 eV were observed to be dominated by the microstructural variations such as due to the changes in density, oxide overlayer thickness and composition, surface roughness, and redistribution of available excess silicon (after formation of MoSiz (tetragonal) phase). These microstructural variations indicated modification of interfaces and significant change in conductivity, which were corroborated in the AES depth profiles and the electrical resistivity measurements.en
dc.format.extent722662 bytes-
dc.subjectthin filmsen
dc.subjectoptical propertiesen
dc.titleEllipsometric Studies of Polycrystalline Molybdenum Silicide Thin Filmsen
Appears in Collections:Physics

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