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http://hdl.handle.net/2074/60
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| DC Field | Value | Language |
| contributor.author | Srinivas, G | - |
| contributor.author | Vankar, V D | - |
| date.accessioned | 2005-02-28T12:17:24Z | - |
| date.available | 2005-02-28T12:17:24Z | - |
| date.issued | 1996 | - |
| identifier.citation | Materials Research Bulletin, 31(11), 1331-1340. | en |
| identifier.uri | http://eprint.iitd.ac.in/dspace/handle/2074/60 | - |
| description.abstract | Systematic ellipsometric studies of MoSia(tetragona1) thin films formed by
RTA processing of cosputtered Mo&i75, Mql&,, and Mo&ia thin films are
discussed. The optical properties of these films in the measured spectral
range 1.3-5.3 eV were observed to be dominated by the microstructural
variations such as due to the changes in density, oxide overlayer thickness
and composition, surface roughness, and redistribution of available excess
silicon (after formation of MoSiz (tetragonal) phase). These microstructural
variations indicated modification of interfaces and significant change in
conductivity, which were corroborated in the AES depth profiles and the
electrical resistivity measurements. | en |
| format.extent | 722662 bytes | - |
| format.mimetype | application/pdf | - |
| language.iso | en | - |
| subject | thin films | en |
| subject | sputtering | en |
| subject | optical properties | en |
| title | Ellipsometric Studies of Polycrystalline Molybdenum Silicide Thin Films | en |
| type | Article | en |
| Appears in Collections: | Physics
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| gsrinivasell96.pdf | | 705Kb | Adobe PDF | View/Open |
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