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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/662

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dc.contributor.authorKapil, R-
dc.contributor.authorMehta, B R-
dc.contributor.authorVankar, V D-
dc.contributor.authorRoy, C-
dc.contributor.authorPradhan, A-
dc.date.accessioned2005-08-02T06:46:57Z-
dc.date.available2005-08-02T06:46:57Z-
dc.date.issued1998-
dc.identifier.citationThin Solid Films, 322(1-2), 74–84en
dc.identifier.urihttp://eprint.iitd.ac.in/dspace/handle/2074/662-
dc.description.abstractDiamond thin films have been grown using a cyclic growth–etch oxy-acetylene flame process on Si, W and Mo substrates. This process resulted into the growth of cubic diamond, 8H and 15R polytypes of diamond. The results suggest that cubic diamond grows with.The formation of intermediate low-symmetry polytypes. Glancing angle X-ray diffraction XRD and micro Raman spectroscopy techniques have been used to characterize these films. The relative growth of various polytypes have been found to be a strong function of acetylene to oxygen flow ratio, speed of rotation and the substrate materials.en
dc.format.extent543019 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoenen
dc.subjectDiamond thin filmsen
dc.subjectOxy-acetylene flame processen
dc.subjectEtchingen
dc.titleGrowth of diamond thin films in a cyclic growth–etch oxy-acetylene flame processen
dc.typeArticleen
Appears in Collections:Physics

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