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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/684

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dc.contributor.authorKapil, R-
dc.contributor.authorMehta, B R-
dc.contributor.authorVankar, V D-
dc.date.accessioned2005-08-03T09:12:17Z-
dc.date.available2005-08-03T09:12:17Z-
dc.date.issued1998-
dc.identifier.citationThin Solid Films, 312(1-2), 106-110en
dc.identifier.urihttp://eprint.iitd.ac.in/dspace/handle/2074/684-
dc.description.abstractDiamnnd thin films were deposited using a cyclic growth/etch oxy-acetylene process on tungslen substrates, Growth of 8H polytype of diamond was observed in the diamond thin films. Dcpusilion was 8H polylypc of dimand was found to be strongly dependent on Ihe process parameters. Two different phases of tungesten carbide. which were formed at the substrate/film interface were also idenlified by X-ray diffraction. Raman spectrum of these samples confirmed the presence of 8H polytype.en
dc.format.extent154155 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoenen
dc.subjectCarbonen
dc.subjectDiamonden
dc.subjectRaman scatteringen
dc.subjectX-ray diffractionen
dc.titleGrowth of 8H polytype of diamond using cyclic growth/etch oxy-acetylene flame setupen
dc.typeArticleen
Appears in Collections:Physics

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