EPrints@IIT Delhi >
Faculty Research Publicatons  >
Physics >

Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/691

Title: Improvement of the oxygen gas sensitivity in doped TiO2 thick films
Authors: Sharma, Rajnish K
Bhatnagar, M C
Keywords: Titania
Oxygen sensor
Response time
Issue Date: 1999
Citation: Sensors and Actuators B, 56(3), 215–219
Abstract: The titania (TiO2) thick films were prepared by using screen-printing technology of 0.00, 0.20 and 0.40 wt.% Nb and 0.40 wt.% Cr concentration on alumina substrate. These thick films were sintered at 1300C for 5 h in the atmosphere to obtain rutile phase of Ti0 .The material characterization was done by using X-ray diffraction XRD and scanning electron microscope SEM . The sensitivity measurements were carried out as a function of operating temperature (400–600C) in Nb doped TiO sensor and (600–800C) in Cr doped sensor as a function of oxygen partial pressure. The response time measurements in Nb doped sensors were carried out at operating temperatures (400–600C) at 1200 ppm oxygen partial pressure and operating temperatures (600–800C) at 1000 ppm oxygen partial pressure in Cr doped TiO sensor. The results show that Nb doped sensor exhibits higher sensitivity at 550C as compared to pure TiO2 sensor, while in the other case, Cr doped sensor shows high sensitivity towards oxygen at 700C. The result indicates that grain growth cab can be modified by using suitable doping which is responsible for improving stability and sensitivity of the sensor.
URI: http://eprint.iitd.ac.in/dspace/handle/2074/691
Appears in Collections:Physics

Files in This Item:

File Description SizeFormat
sharmaimp1999.pdf247.13 kBAdobe PDFView/Open
View Statistics

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.


Valid XHTML 1.0! DSpace Software Copyright © 2002-2010  Duraspace - Feedback