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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/691

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dc.contributor.authorSharma, Rajnish K-
dc.contributor.authorBhatnagar, M C-
dc.date.accessioned2005-08-03T09:53:36Z-
dc.date.available2005-08-03T09:53:36Z-
dc.date.issued1999-
dc.identifier.citationSensors and Actuators B, 56(3), 215–219en
dc.identifier.urihttp://eprint.iitd.ac.in/dspace/handle/2074/691-
dc.description.abstractThe titania (TiO2) thick films were prepared by using screen-printing technology of 0.00, 0.20 and 0.40 wt.% Nb and 0.40 wt.% Cr concentration on alumina substrate. These thick films were sintered at 1300C for 5 h in the atmosphere to obtain rutile phase of Ti0 .The material characterization was done by using X-ray diffraction XRD and scanning electron microscope SEM . The sensitivity measurements were carried out as a function of operating temperature (400–600C) in Nb doped TiO sensor and (600–800C) in Cr doped sensor as a function of oxygen partial pressure. The response time measurements in Nb doped sensors were carried out at operating temperatures (400–600C) at 1200 ppm oxygen partial pressure and operating temperatures (600–800C) at 1000 ppm oxygen partial pressure in Cr doped TiO sensor. The results show that Nb doped sensor exhibits higher sensitivity at 550C as compared to pure TiO2 sensor, while in the other case, Cr doped sensor shows high sensitivity towards oxygen at 700C. The result indicates that grain growth cab can be modified by using suitable doping which is responsible for improving stability and sensitivity of the sensor.en
dc.format.extent253064 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoenen
dc.subjectTitaniaen
dc.subjectSensitivityen
dc.subjectOxygen sensoren
dc.subjectResponse timeen
dc.subjectDopingen
dc.titleImprovement of the oxygen gas sensitivity in doped TiO2 thick filmsen
dc.typeArticleen
Appears in Collections:Physics

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