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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/70

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dc.contributor.authorSripathi, Y-
dc.contributor.authorMalhotra, L K-
dc.contributor.authorReddy, G B-
dc.date.accessioned2005-03-16T11:32:42Z-
dc.date.available2005-03-16T11:32:42Z-
dc.date.issued1995-
dc.identifier.citationThin Solid Films 270, 60-64en
dc.identifier.urihttp://eprint.iitd.ac.in/dspace/handle/2074/70-
dc.description.abstractGa20Ge30Te50 thin films deposited by vacuum evaporation on various substrates have been studied for their structural and optical properties. The as-deposited amorphous films were crystallized by thermally annealing them. The optical constants of the amorphous films indicate semiconducting behaviour (n > k). The optical bandgap (Eg) determined from Taut’s plot is 0.7 eV. The change in reflectance on crystallization has been utilized to obtain maximum optical contrast by optimising the thickness of the film.en
dc.format.extent469276 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoen-
dc.subjectEvaporationen
dc.subjectOptical propertiesen
dc.subjectStructural propertiesen
dc.titleGaGeTe Films as Phase-change Optical Recording Mediaen
dc.typeArticleen
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