|
EPrints@IIT Delhi >
Faculty Research Publicatons >
Applied Research in Electronics [CARE] >
Please use this identifier to cite or link to this item:
http://hdl.handle.net/2074/769
|
| Title: | Strain studies in LPCVD polysilicon for surface micromachined devices |
| Authors: | Singh, Janak
Chandra, Sudhir
Chand, Ami |
| Keywords: | Polysilicon
Residual strain
Surface micromachining
Furnace annealing
RTA
Spiral structure |
| Issue Date: | 1999 |
| Citation: | Sensors and Actuators, 77(2), 133–138 |
| Abstract: | Polycrystalline silicon polysilicon has emerged as a preferred material for surface micromachined MEMS applications because of its compatibility with standard CMOS process. The important parameters of polysilicon films for sensor–actuator devices are the residual stress and stress gradient. For free standing microstructures, it is important to reduce the stress in the film. In order to exploit the advantage of polysilicon for MEMS applications, it is essential to develop a process to obtain low-stress polysilicon films. In the present work, we have investigated the effect of deposition parameters on 2–4 mm thick LPCVD polysilicon films using a specially designed
spiral structure for strain measurements. The films were deposited in the temperature range of 580–6308C at pressures 180 to 320 mTorr.The role of post-deposition annealing at 10008C in N ambient on strain reduction has been investigated using conventional furnace 2 annealing and rapid thermal annealing RTA . The as-deposited ... |
| URI: | http://eprint.iitd.ac.in/dspace/handle/2074/769 |
| Appears in Collections: | Applied Research in Electronics [CARE]
|
Files in This Item:
| File |
Description |
Size | Format |
|---|
| singhstr1999.pdf | | 493Kb | Adobe PDF | View/Open |
|
Show full item record
All items in DSpace are protected by copyright, with all rights reserved.
|
