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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/786

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dc.contributor.authorTripathy, S-
dc.contributor.authorSoni, R K-
dc.contributor.authorAsahi, H-
dc.contributor.authorGonda, S-
dc.date.accessioned2005-08-25T04:14:29Z-
dc.date.available2005-08-25T04:14:29Z-
dc.date.issued2000-
dc.identifier.citationPhysica B, 275(4), 301-307en
dc.identifier.urihttp://eprint.iitd.ac.in/dspace/handle/2074/786-
dc.description.abstractWe have carried out defect-induced Raman scattering in resonance with yellow-luminescence (YL) transitions in GaN layers grown on sapphire by electron cyclotron resonance-molecular beam epitaxy technique. The photoluminescence (PL) data shows strong excitonic peaks in the near-band-edge region apart from the weak and broad yellowluminescence transitions. Raman spectra from various GaN samples prepared by this technique show strong and distinct Raman peaks in the low-energy region (90}260 cm-1). These peaks are attributed to electronic excitations of donors, which are involved in the yellow-luminescence transitions. Resonant enhancement of these peaks is seen as a function of temperature.en
dc.format.extent247860 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoenen
dc.subjectMolecular beam epitaxyen
dc.subjectPhotoluminescenceen
dc.subjectRaman scatteringen
dc.subjectYellow luminescenceen
dc.subjectShallow donorsen
dc.subjectElectronic Raman scatteringen
dc.titleRaman scattering in resonance with yellow luminescence transitions in GaN layers grown on sapphire by molecular beam epitaxyen
dc.typeArticleen
Appears in Collections:Physics

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