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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/786

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dc.contributor.authorTripathy, S-
dc.contributor.authorSoni, R K-
dc.contributor.authorAsahi, H-
dc.contributor.authorGonda, S-
dc.identifier.citationPhysica B, 275(4), 301-307en
dc.description.abstractWe have carried out defect-induced Raman scattering in resonance with yellow-luminescence (YL) transitions in GaN layers grown on sapphire by electron cyclotron resonance-molecular beam epitaxy technique. The photoluminescence (PL) data shows strong excitonic peaks in the near-band-edge region apart from the weak and broad yellowluminescence transitions. Raman spectra from various GaN samples prepared by this technique show strong and distinct Raman peaks in the low-energy region (90}260 cm-1). These peaks are attributed to electronic excitations of donors, which are involved in the yellow-luminescence transitions. Resonant enhancement of these peaks is seen as a function of temperature.en
dc.format.extent247860 bytes-
dc.subjectMolecular beam epitaxyen
dc.subjectRaman scatteringen
dc.subjectYellow luminescenceen
dc.subjectShallow donorsen
dc.subjectElectronic Raman scatteringen
dc.titleRaman scattering in resonance with yellow luminescence transitions in GaN layers grown on sapphire by molecular beam epitaxyen
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