EPrints@IIT Delhi : Item 2074/786

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DC Field	Value	Language
contributor.author	Tripathy, S	-
contributor.author	Soni, R K	-
contributor.author	Asahi, H	-
contributor.author	Gonda, S	-
date.accessioned	2005-08-25T04:14:29Z	-
date.available	2005-08-25T04:14:29Z	-
date.issued	2000	-
identifier.citation	Physica B, 275(4), 301-307	en
identifier.uri	http://eprint.iitd.ac.in/dspace/handle/2074/786	-
description.abstract	We have carried out defect-induced Raman scattering in resonance with yellow-luminescence (YL) transitions in GaN layers grown on sapphire by electron cyclotron resonance-molecular beam epitaxy technique. The photoluminescence (PL) data shows strong excitonic peaks in the near-band-edge region apart from the weak and broad yellowluminescence transitions. Raman spectra from various GaN samples prepared by this technique show strong and distinct Raman peaks in the low-energy region (90}260 cm-1). These peaks are attributed to electronic excitations of donors, which are involved in the yellow-luminescence transitions. Resonant enhancement of these peaks is seen as a function of temperature.	en
format.extent	247860 bytes	-
format.mimetype	application/pdf	-
language.iso	en	en
subject	Molecular beam epitaxy	en
subject	Photoluminescence	en
subject	Raman scattering	en
subject	Yellow luminescence	en
subject	Shallow donors	en
subject	Electronic Raman scattering	en
title	Raman scattering in resonance with yellow luminescence transitions in GaN layers grown on sapphire by molecular beam epitaxy	en
type	Article	en
Appears in Collections:	Physics

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