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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/786

Title: Raman scattering in resonance with yellow luminescence transitions in GaN layers grown on sapphire by molecular beam epitaxy
Authors: Tripathy, S
Soni, R K
Asahi, H
Gonda, S
Keywords: Molecular beam epitaxy
Photoluminescence
Raman scattering
Yellow luminescence
Shallow donors
Electronic Raman scattering
Issue Date: 2000
Citation: Physica B, 275(4), 301-307
Abstract: We have carried out defect-induced Raman scattering in resonance with yellow-luminescence (YL) transitions in GaN layers grown on sapphire by electron cyclotron resonance-molecular beam epitaxy technique. The photoluminescence (PL) data shows strong excitonic peaks in the near-band-edge region apart from the weak and broad yellowluminescence transitions. Raman spectra from various GaN samples prepared by this technique show strong and distinct Raman peaks in the low-energy region (90}260 cm-1). These peaks are attributed to electronic excitations of donors, which are involved in the yellow-luminescence transitions. Resonant enhancement of these peaks is seen as a function of temperature.
URI: http://eprint.iitd.ac.in/dspace/handle/2074/786
Appears in Collections:Physics

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