EPrints@IIT Delhi >
Faculty Research Publicatons  >
Physics >

Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/882

Title: Formation of highly oriented GeBiSe films from the as-deposited amorphous state by annealing
Authors: Rajagopalan, T
Reddy, G B
Keywords: Oriented films
Structural analysis
Laser annealing
Issue Date: 2000
Citation: Thin Solid Films, 377-378(1), 501-506
Abstract: As-deposited amorphous GeBiSe films were crystallized by thermal and laser annealing. Their structural properties were studied using a glancing angle X-ray diffractometer GAXRD and a transmission electron microscope TEM . Films were crystallized into either a polycrystalline or a highly oriented state, depending on the choice of parameters, such as annealing temperature, rate and duration, and substrate nature and composition. All phases have been identified. The effect of annealing conditions on the relative proportion of these phases has been investigated. A wide range of surface topographical features, such as pyramidal needle shapes of 3 mm length and spherical crystallites with average sizes of 0.35-2 mm, were observed on annealing. The laser scan parameters have been optimized to only obtain crystallization. The film composition and annealing parameters have been optimized in order to obtain strongly oriented crystalline films with a smooth surface topography.
URI: http://eprint.iitd.ac.in/dspace/handle/2074/882
Appears in Collections:Physics

Files in This Item:

File Description SizeFormat
rajagopalanfor2000.pdf769.38 kBAdobe PDFView/Open
View Statistics

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.


Valid XHTML 1.0! DSpace Software Copyright © 2002-2010  Duraspace - Feedback