EPrints@IIT Delhi : Item 2074/891

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DC Field	Value	Language
contributor.author	Rasheed, B G	-
contributor.author	Mavi, H S	-
contributor.author	Shukla, A K	-
contributor.author	Abbi, S C	-
contributor.author	Jain, K P	-
date.accessioned	2005-10-18T05:12:18Z	-
date.available	2005-10-18T05:12:18Z	-
date.issued	2001	-
identifier.citation	Materials Science and Engineering B, 79(1), 71–77	en
identifier.uri	http://eprint.iitd.ac.in/dspace/handle/2074/891	-
description.abstract	A comparative study of porous silicon (PS) fabricated by laser-induced etching on n-type crystalline-silicon and n-type polysilicon substrates is presented here under near resonance conditions by employing a Nd:YAG laser. A scanning electron microscopic study of the two PS samples, prepared under identical processing conditions, elucidates differences in surface morphology. An analysis of the Raman and PL spectra from the two PS materials, employing quantum confinement models, is presented and it further elucidates differences in the nanocrystallites size distributions. A qualitative explanation for the differences is presented.	en
format.extent	501288 bytes	-
format.mimetype	application/pdf	-
language.iso	en	en
subject	Porous silicon	en
subject	Photoluminescence	en
subject	Raman scattering	en
subject	Semiconductors	en
title	Surface reconstruction of silicon and polysilicon by Nd:YAG laser etching: SEM, Raman and PL studies	en
type	Article	en
Appears in Collections:	Physics

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