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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/891

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dc.contributor.authorRasheed, B G-
dc.contributor.authorMavi, H S-
dc.contributor.authorShukla, A K-
dc.contributor.authorAbbi, S C-
dc.contributor.authorJain, K P-
dc.date.accessioned2005-10-18T05:12:18Z-
dc.date.available2005-10-18T05:12:18Z-
dc.date.issued2001-
dc.identifier.citationMaterials Science and Engineering B, 79(1), 71–77en
dc.identifier.urihttp://eprint.iitd.ac.in/dspace/handle/2074/891-
dc.description.abstractA comparative study of porous silicon (PS) fabricated by laser-induced etching on n-type crystalline-silicon and n-type polysilicon substrates is presented here under near resonance conditions by employing a Nd:YAG laser. A scanning electron microscopic study of the two PS samples, prepared under identical processing conditions, elucidates differences in surface morphology. An analysis of the Raman and PL spectra from the two PS materials, employing quantum confinement models, is presented and it further elucidates differences in the nanocrystallites size distributions. A qualitative explanation for the differences is presented.en
dc.format.extent501288 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoenen
dc.subjectPorous siliconen
dc.subjectPhotoluminescenceen
dc.subjectRaman scatteringen
dc.subjectSemiconductorsen
dc.titleSurface reconstruction of silicon and polysilicon by Nd:YAG laser etching: SEM, Raman and PL studiesen
dc.typeArticleen
Appears in Collections:Physics

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