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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/891

Title: Surface reconstruction of silicon and polysilicon by Nd:YAG laser etching: SEM, Raman and PL studies
Authors: Rasheed, B G
Mavi, H S
Shukla, A K
Abbi, S C
Jain, K P
Keywords: Porous silicon
Photoluminescence
Raman scattering
Semiconductors
Issue Date: 2001
Citation: Materials Science and Engineering B, 79(1), 71–77
Abstract: A comparative study of porous silicon (PS) fabricated by laser-induced etching on n-type crystalline-silicon and n-type polysilicon substrates is presented here under near resonance conditions by employing a Nd:YAG laser. A scanning electron microscopic study of the two PS samples, prepared under identical processing conditions, elucidates differences in surface morphology. An analysis of the Raman and PL spectra from the two PS materials, employing quantum confinement models, is presented and it further elucidates differences in the nanocrystallites size distributions. A qualitative explanation for the differences is presented.
URI: http://eprint.iitd.ac.in/dspace/handle/2074/891
Appears in Collections:Physics

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