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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/925

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dc.contributor.authorMavi, H S-
dc.contributor.authorRasheed, B G-
dc.contributor.authorShukla, A K-
dc.contributor.authorAbbi, S C-
dc.contributor.authorJain, K P-
dc.identifier.citationJournal of Non-Crystalline Solids, 286(3), 162-168en
dc.description.abstractPhotoluminescence (PL) spectra of porous silicon (PS) samples fabricated with laser-induced etching (LIE) in HF acid are analyzed using a quantum confinement model with an assumption that porous silicon consists of a distribution of nanocrystallites corresponding to the Gaussian function. The mean nanocrystallite size and size distribution parameters are studied here as a function of the laser power density and irradiation time during laser-induced etching. The photoluminescence peak position energy is found to vary between 1.8 and 2 eV as the laser power density or irradiation time of the Nd:YAG laser is varied. Furthermore, the study helps in gaining fresh insight into maximizing the photoluminescence yields from porous silicon by optimizing laser parameters in the etching process.en
dc.format.extent365368 bytes-
dc.subjectporous siliconen
dc.subjectlaser-induced etchingen
dc.subjectnanocrystallites correspondingen
dc.subjectlaser parametersen
dc.titlePhotoluminescence study of Nd:YAG laser-etched siliconen
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