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http://hdl.handle.net/2074/925
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| Title: | Photoluminescence study of Nd:YAG laser-etched silicon |
| Authors: | Mavi, H S
Rasheed, B G
Shukla, A K
Abbi, S C
Jain, K P |
| Keywords: | photoluminescence
porous silicon
laser-induced etching
nanocrystallites corresponding
laser parameters |
| Issue Date: | 2001 |
| Citation: | Journal of Non-Crystalline Solids, 286(3), 162-168 |
| Abstract: | Photoluminescence (PL) spectra of porous silicon (PS) samples fabricated with laser-induced etching (LIE) in HF acid are analyzed using a quantum confinement model with an assumption that porous silicon consists of a distribution of nanocrystallites corresponding to the Gaussian function. The mean nanocrystallite size and size distribution parameters are studied here as a function of the laser power density and irradiation time during laser-induced etching. The photoluminescence peak position energy is found to vary between 1.8 and 2 eV as the laser power density or irradiation time of the Nd:YAG laser is varied. Furthermore, the study helps in gaining fresh insight into maximizing the photoluminescence yields from porous silicon by optimizing laser parameters in the etching process. |
| URI: | http://eprint.iitd.ac.in/dspace/handle/2074/925 |
| Appears in Collections: | Physics
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