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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/943

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dc.contributor.authorPattanaik, Gyana R-
dc.contributor.authorPandya, Dinesh K-
dc.contributor.authorKashyap, Subhash C-
dc.date.accessioned2005-10-18T05:48:48Z-
dc.date.available2005-10-18T05:48:48Z-
dc.date.issued2001-
dc.identifier.citationJournal of Magnetism and Magnetic Materials, 234(2), 294-298en
dc.identifier.urihttp://eprint.iitd.ac.in/dspace/handle/2074/943-
dc.description.abstractHigh quality Cu–Co alloy films with excellent metallic luster have been electrolytically deposited directly onto n-Si (1 0 0) substrate, thereby eliminating the need of a conducting seed layer, which is otherwise required when the films were grown on insulating substrates (Al2O3). The as-deposited Cu–Co films exhibit relatively higher magnetoresistance (MR) in comparison with the as-deposited films on Al2O3 under identical conditions. The observed increase in MR could be attributed to the reduced substrate current shunting. The MR further improves to 2.67% (at H = 10 kOe) with vacuum annealing (at 4251C for 30 min) of the films on Si. This has been ascribed to the separation of Cu and Co phases resulting in a magnetic granular nanostructure. This value of MR of annealed films on Si is, however, lower in comparison with the value obtained for annealed films deposited on Al2O3. Glancing angle X-ray diffraction (GAXRD) has revealed the formation of copper silicide in these samples, which is responsible for the lower value of MR. Thus we have observed good MR with a copper silicide host matrix.en
dc.format.extent371121 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoenen
dc.subjectGiant magnetoresistanceen
dc.subjectElectrodepositionen
dc.subjectCu–Coen
dc.subjectN-Sien
dc.titleGiant magnetoresistance in Cu–Co films electrodeposited on n-Sien
dc.typeArticleen
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