on a-Si:H p-i-n solar cells; plasma chemical; vapor deposition; Reverse biased; annealing treatment; hydrogen motion.
The bulk and interface states and their effect on a-Si:H p-i-n solar cells have been nvestigated using dark reverse current-voltage (J-V) properties on the basis of thermal generation of carriers from the defect states. In this study, the samples are prepared by plasma chemical vapor deposition CVD (multi-chamber) deposition technique. The open circuit
voltage, Voc, short circuit current, Isc, and efficiency of the cells are, respectively, 0.8 V, 12.7 mA/cm 2 and 5.2%. The bulk (i-layer) and interface (p/i) state densities in these cells have been determined. Reverse biased annealing treatment on these cells shows an effect on the interface states only. The interface state density decreases in the cells which are annealed at - 2 V. The observed insignificant effect of light soaking in these cells is xplained in terms of hydrogen motion.