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A new lateral SiGe-base PNM Schottky collector bipolar transistor on SOI for non-saturating VLSI logic design

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Author: M J Kumar; Venkateshrao, D

Advisor: Advisor

Date: 2003

Publisher:
Citation: VLSI Desig

Series/Report no.:
Item Type: Article

Keywords: schottky collector bipolar transistor; silicon-on-insulator; suppressed Kirk

Abstract: A novel bipolar transistor structure, namely, SiGe base lateral PNM Schottky collector bipolar transistor (SCBT) on silicon-on-insulator (SOI) substrate is explored using two-dimensional (2D) simulation. Based on a comparison with its equivalent PNP HBT, we demonstrate for the first time that the proposed SiGe base lateral PNM transistor exhibits a superior performance in terms of high current gain and cut-off frequency, reduced collector resistance, negligible reverse recovery time and suppressed Kirk effect.
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Shankar B. Chavan
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Shankar B. Chavan
Computer Applications Division
Central Library, IIT Delhi
shankar.chavan@library.iitd.ac.in
NDLTD
Shodhganga
NDL
ePrints@IISc
etd@IISc
IR@IIT Bombay
NewsClips @IITD
  • facebook
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