| Author: | M J Kumar; Venkateshrao, D |
| Advisor: | Advisor |
| Date: | 2003
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| Publisher: | |
| Citation: | VLSI Desig
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| Series/Report no.: |
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| Item Type: | Article
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| Keywords: | schottky collector bipolar transistor; silicon-on-insulator; suppressed Kirk |
| Abstract: | A novel bipolar transistor structure, namely, SiGe base lateral PNM Schottky collector bipolar transistor (SCBT) on silicon-on-insulator (SOI) substrate is explored using two-dimensional (2D) simulation. Based on a comparison with its equivalent PNP HBT, we demonstrate for the first time that the proposed SiGe base lateral PNM transistor exhibits a superior performance in terms of high current gain and cut-off frequency, reduced collector resistance, negligible reverse recovery time and suppressed Kirk effect. |
