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Proposal and design of a new SiC-emitter lateral NPM Schottky collector bipolar transistor on SOI for VLSI applications

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Author: M Jagadesh Kumar; Rao, D V

Advisor: Advisor

Date: 2004

Publisher:
Citation: Circuits,

Series/Report no.:
Item Type: Article

Keywords: schottky collector bipolar transistor; silicon-on-insulator; Si lateral NPN BJT; SiC emitter lateral NPN HBT; BiCMOS technology

Abstract: A novel bipolar transistor structure, namely, a SiC emitter lateral NPM Schottky collector bipolar transistor (SCBT) with a silicon-on-insulator (SOI) substrate is explored using two-dimensional (2-D) simulation. A comprehensive comparison of the proposed structure with its equivalent Si lateral NPN BJT and an SiC emitter lateral NPN HBT is presented. Based on simulation results, the authors demonstrate for the first time that the proposed SiC emitter lateral NPM transistor shows superior performance in terms of high current gain and cut-off frequency, reduced collector resistance, negligible reverse recovery time and suppressed Kirk effect over its equivalent Si lateral NPN BJT and SiC emitter lateral NPN HBT. A simple fabrication process compatible with BiCMOS technology is also discussed.
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Shankar B. Chavan
Computer Applications Division
Central Library, IIT Delhi
shankar.chavan@library.iitd.ac.in
NDLTD
Shodhganga
NDL
ePrints@IISc
etd@IISc
IR@IIT Bombay
NewsClips @IITD
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