Show simple item record

dc.contributor.authorReddy, G B
dc.contributor.authorDhar, A
dc.contributor.authorMalhotra, L K
dc.contributor.authorSharmila, E K
dc.date.accessioned2007-02-27T03:29:39Z
dc.date.accessioned2019-02-09T08:22:44Z
dc.date.available2007-02-27T03:29:39Z
dc.date.available2019-02-09T08:22:44Z
dc.date.issued1992
dc.identifier.citationThin Solid Films, 220(1-2), 111-115p.en
dc.identifier.urihttp://localhost:8080/xmlui/handle/12345678/2519
dc.description.abstractAdherent and pin-hole free amorphous Sb2Te3 thin films have been obtained by vacuum evaporation at substrate temperatures ≤25 °C. The films have been crystallized by thermal and laser annealing, and the crystallization processes monitored as a function of annealing temperature and laser scan speed. A comparative study of topography reveals disk-shaped crystallized areas in thermal crystallization and dendrite growth in the laser induced process. The crystallized films in both cases contain a single Sb2Te3 phase. Activation energy of 2 eV for crystallization, determined using differential scanning calorimetery indicates good room temperature stability of the amorphous states.en
dc.format.extent136261 bytes
dc.format.mimetypeapplication/pdf
dc.language.isoenen
dc.subjectpin-hole free amorphousen
dc.subjectdisk-shaped crystallizeden
dc.subjectthermal crystallizationen
dc.subjectamorphous statesen
dc.titleComparative study of crystallization processes in Sb2Te3 films using laser and thermal annealing techniquesen
dc.typeArticleen


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record