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Etching of crystalline and amorphous silicon in CClF3 plasma

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Author: Agrawal, Neeta; Tarey, R D; Chopra, K L

Advisor: Advisor

Date: 1991

Publisher:
Citation: Thin Solid

Series/Report no.:
Item Type: Article

Keywords: Plasma etching; Amorphous silicon; Crystalline silicon; Oxygen; Hydrogen

Abstract: Plasma etching of crystalline and hydrogenated amorphous silicon has been studied in CClF3 gas as a function of pressure and power using a 30 kHz parallel plate plasma-etching system. In contrast to CF4 plasma, etching of amorphous silicon in CClF3 is found to be slower than that of crystalline silicon. The selectivity of crystalline silicon over amorphous silicon is observed in the range 1.5–4.0 in CClF3 plasma as against 0.5–1.0 in CF4 plasma. The effect of mixing oxygen and hydrogen with CClF3 is also discussed. Auger electron spectroscopy has been performed in order to identify the residual chemisorbed species on the sample surface during etching in CClF3 plasma.
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Shankar B. Chavan
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Shankar B. Chavan
Computer Applications Division
Central Library, IIT Delhi
shankar.chavan@library.iitd.ac.in
NDLTD
Shodhganga
NDL
ePrints@IISc
etd@IISc
IR@IIT Bombay
NewsClips @IITD
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