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dc.contributor.authorAgrawal, Neeta
dc.contributor.authorTarey, R D
dc.contributor.authorChopra, K L
dc.date.accessioned2007-03-19T04:05:42Z
dc.date.accessioned2019-02-09T08:23:24Z
dc.date.available2007-03-19T04:05:42Z
dc.date.available2019-02-09T08:23:24Z
dc.date.issued1991
dc.identifier.citationThin Solid Films,198(1-2), 393-399p.en
dc.identifier.urihttp://localhost:8080/xmlui/handle/12345678/2532
dc.description.abstractPlasma etching of crystalline and hydrogenated amorphous silicon has been studied in CClF3 gas as a function of pressure and power using a 30 kHz parallel plate plasma-etching system. In contrast to CF4 plasma, etching of amorphous silicon in CClF3 is found to be slower than that of crystalline silicon. The selectivity of crystalline silicon over amorphous silicon is observed in the range 1.5–4.0 in CClF3 plasma as against 0.5–1.0 in CF4 plasma. The effect of mixing oxygen and hydrogen with CClF3 is also discussed. Auger electron spectroscopy has been performed in order to identify the residual chemisorbed species on the sample surface during etching in CClF3 plasma.en
dc.format.extent132433 bytes
dc.format.mimetypeapplication/pdf
dc.language.isoenen
dc.subjectPlasma etchingen
dc.subjectAmorphous siliconen
dc.subjectCrystalline siliconen
dc.subjectOxygenen
dc.subjectHydrogenen
dc.titleEtching of crystalline and amorphous silicon in CClF3 plasmaen
dc.typeArticleen


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