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dc.contributor.authorMalhotra, L K
dc.contributor.authorKashyap, Subhash C
dc.contributor.authorBhan, Mohan Krishan
dc.date.accessioned2007-03-19T04:23:27Z
dc.date.accessioned2019-02-09T08:23:23Z
dc.date.available2007-03-19T04:23:27Z
dc.date.available2019-02-09T08:23:23Z
dc.date.issued1991
dc.identifier.citationThin Solid Films,197(1-2), 269-277p.en
dc.identifier.urihttp://localhost:8080/xmlui/handle/12345678/2534
dc.description.abstractInfrared and spectroscopic ellipsometric studies have been done on thin films of hydrogenated amorphous silicon (a-Si:H), germanium (a-Ge:H) and silicon---germanium alloy of a typical composition (a-Si28Ge72:H) prepared by reactive ion beam sputtering (RIBS). Films deposited at increasing H2:Ar flow ratio generally show enhanced dihydride and polyhydride bonding and a decreased value of 2max. A correlation of the two results reveals that the increase in hydrogen content affects the growth process considerably and makes the films density deficient and inhomogeneous by increasing the volume fraction of voids, network strains and vacancies. The a-Si28Ge72:H films deposited at increasing H2:Ar flow ratio show a preferential attachment of hydrogen to silicon rather than to germanium. It has been found that RIBS-prepared films are more density deficient as compared to films deposited by glow discharge, owing mainly to the presence of dihydride species.en
dc.format.extent195424 bytes
dc.format.mimetypeapplication/pdf
dc.language.isoenen
dc.subjectEllipsometric studiesen
dc.subjectSilicon---germaniumen
dc.subjectHydrogenated amorphous siliconen
dc.subjectDihydrideen
dc.subjectPolyhydrideen
dc.titleInfrared and ellipsometric studies of reactive-ion-beam-sputtered hydrogenated amorphous silicon (a-Si:H), germanium (a-Ge:H) and Si---Ge alloy (a-Si28Ge72:H) films—a correlationen
dc.typeArticleen


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