Diamnnd thin films were deposited using a cyclic growth/etch oxy-acetylene process on tungslen substrates, Growth of 8H polytype
of diamond was observed in the diamond thin films. Dcpusilion was 8H polylypc of dimand was found to be strongly dependent on Ihe
process parameters. Two different phases of tungesten carbide. which were formed at the substrate/film interface were also idenlified by X-ray diffraction. Raman spectrum of these samples confirmed the presence of 8H polytype.