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Growth of 8H polytype of diamond using cyclic growth/etch oxy-acetylene flame setup

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Author: Kapil, R; Mehta, B R; Vankar, V D

Advisor: Advisor

Date: 1998

Publisher:
Citation: Thin Solid

Series/Report no.:
Item Type: Article

Keywords: Carbon; Diamond; Raman scattering; X-ray diffraction

Abstract: Diamnnd thin films were deposited using a cyclic growth/etch oxy-acetylene process on tungslen substrates, Growth of 8H polytype of diamond was observed in the diamond thin films. Dcpusilion was 8H polylypc of dimand was found to be strongly dependent on Ihe process parameters. Two different phases of tungesten carbide. which were formed at the substrate/film interface were also idenlified by X-ray diffraction. Raman spectrum of these samples confirmed the presence of 8H polytype.
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Shankar B. Chavan
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Shankar B. Chavan
Computer Applications Division
Central Library, IIT Delhi
shankar.chavan@library.iitd.ac.in
NDLTD
Shodhganga
NDL
ePrints@IISc
etd@IISc
IR@IIT Bombay
NewsClips @IITD
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