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Effect of annealing rate on the crystallization process in Ge5Bi18Se77 films

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Author: Rajagopalan, T; Reddy, G B

Advisor: Advisor

Date: 1999

Publisher:
Citation: Thin Solid

Series/Report no.:
Item Type: Article

Keywords: Annealing; Crystallization; Chalcogenide; Storngly oriented growth

Abstract: Amorphous Ge5Bi18Se77 thin films deposited by thermal evaporation were crystallized by thermal annealing at their crystallization temperature (Tc). The composition, determined using EDAX, does not indicate any significant variation in both as-deposited films and films annealed with different annealing rates from that of bulk alloy. The effect of annealing rate on the nature and the degree of crystallization has been investigated by studying the structure using TEM/XRD and the surface morphology using SEM. It is found that the annealed films crystallized into a face centred cubic (FCC) phase with a lattice constant of 6:2084 0:0015 A . Further, it is also seen that depending on the annealing rate, the as-deposited films crystallized into either single crystal films or polycrystalline films. A detailed analysis of the structural properties has been presented.
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Shankar B. Chavan
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Shankar B. Chavan
Computer Applications Division
Central Library, IIT Delhi
shankar.chavan@library.iitd.ac.in
NDLTD
Shodhganga
NDL
ePrints@IISc
etd@IISc
IR@IIT Bombay
NewsClips @IITD
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