Properties of RF plasma grown Al2O3 and Aln insulators on silicon and effect of plasma annealing on thermally grown SiO2 films

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Author: Chandra, Sudhir
Advisor: Bhattacharyya, A.B.
Date: 1980
Publisher: IIT Delhi
Citation:
Series/Report no.: TH-724;
Item Type: Thesis
Keywords: Keywords
Abstract: