भारतीय प्रौद्योगिकी संस्थान दिल्ली
Indian Institute of Technology, Delhi
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Properties of RF plasma grown Al2O3 and Aln insulators on silicon and effect of plasma annealing on thermally grown SiO2 films
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TH-724.pdf
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Physics -ETD
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Author:
Chandra, Sudhir
Advisor:
Bhattacharyya, A.B.
Date:
1980
Publisher:
IIT Delhi
Citation:
Series/Report no.:
TH-724;
Item Type:
Thesis
Keywords:
Keywords
Abstract:
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