Properties of RF plasma grown Al2O3 and Aln insulators on silicon and effect of plasma annealing on thermally grown SiO2 films

dc.contributor.advisor	Bhattacharyya, A.B.
dc.contributor.author	Chandra, Sudhir
dc.date.accessioned	2015-04-08T05:42:31Z
dc.date.accessioned	2019-02-10T13:27:18Z
dc.date.accessioned	2019-02-11T05:58:30Z
dc.date.available	2015-04-08T05:42:31Z
dc.date.available	2019-02-10T13:27:18Z
dc.date.available	2019-02-11T05:58:30Z
dc.date.issued	1980
dc.identifier.other	532.6 CHA-P
dc.identifier.uri	http://localhost:8080/iit/handle/2074/4288
dc.language.iso	en	en_US
dc.publisher	IIT Delhi
dc.relation.ispartofseries	TH-724;
dc.title	Properties of RF plasma grown Al2O3 and Aln insulators on silicon and effect of plasma annealing on thermally grown SiO2 films	en_US
dc.type	Thesis	en_US