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Porous Si formation and study of its structural and vibrational properties
(2002)
In situ current (I)–(V) voltage studies were carried out to get a better understanding of the mechanism of formation of porous silicon (PS). It is observed that on decreasing the anodization current density below a critical ...
Photoluminescence and Raman study of porous silicon synthesized by visible and infrared laser etching
(2001)
Visible and infrared lasers have been used to photochemically fabricate photoluminescent porous silicon thin films on n-type silicon substrates. Photoluminescence measurements on porous silicon exhibit a two-peak structure ...
Continuous wave laser-induced temperature rise in the thin films of silicon nanocrystals using Raman scattering
(2003)
Continuous wave (CW) laser-induced temperature rise is studied in Raman spectra of nanocrystalline-silicon (nC-Si) films on quartz and sapphire substrates. The zone-center-phonon (ZCP) mode in the Raman spectra shows ...
Nonlinear phenomenon in nanocrystallites produced by laser-induced etching of silicon
(2003)
Self-phase modulation of continuous wave argon-ion laser beam by a medium containing silicon nanocrystallites is reported here. Refractive index of nanocrystallites shows nonlinear behavior with the intensity of probing ...
Growth of 8H polytype of diamond using cyclic growth/etch oxy-acetylene flame setup
(1998)
Diamnnd thin films were deposited using a cyclic growth/etch oxy-acetylene process on tungslen substrates, Growth of 8H polytype
of diamond was observed in the diamond thin films. Dcpusilion was 8H polylypc of dimand was ...
Raman, photoluminescence and optical absorption studies on nanocrystalline silicon
(2002)
Raman, photoluminescence (PL) and optical absorption results on silicon nanocrystals in SiO2 matrices prepared by RF sputtering method are presented. The samples have varying Si/SiO2 compositional fraction and are annealed ...
Raman scattering in resonance with yellow luminescence transitions in GaN layers grown on sapphire by molecular beam epitaxy
(2000)
We have carried out defect-induced Raman scattering in resonance with yellow-luminescence (YL) transitions in GaN
layers grown on sapphire by electron cyclotron resonance-molecular beam epitaxy technique. The photoluminescence ...
Nonlinear phenomenon in nanocrystallites produced by laser-induced etching of silicon
(2003)
Self-phase modulation of continuous wave argon-ion laser beam by a medium containing silicon nanocrystallites is reported here. Refractive index of nanocrystallites shows nonlinear behavior with the intensity of probing ...
Optical transitions and interface structure in (GaP)m/(AlP)n modulated period superlattices
(2004)
We have investigated optical transitions and atomically controlled interface structure in modulated period (GaP)m/(AlP)n (m, n number of monolayers) superlattices (SLs) using low-temperature photoluminescence (PL) and Raman ...
Surface morphology and formation of GaAs nanocrystals by laser-induced etching: SEM, PL and Raman studies
(2004)
GaAs nanostructures were prepared by a laser-induced etching process using a Nd:YAG (λ=1.06 μm) laser. Scanning electron microscope (SEM) was used to monitor changes in surface morphology produced on etching. The etched ...