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Photoluminescence and Raman study of porous silicon synthesized by visible and infrared laser etching
(2001)
Visible and infrared lasers have been used to photochemically fabricate photoluminescent porous silicon thin films on n-type silicon substrates. Photoluminescence measurements on porous silicon exhibit a two-peak structure ...
Raman scattering in resonance with yellow luminescence transitions in GaN layers grown on sapphire by molecular beam epitaxy
(2000)
We have carried out defect-induced Raman scattering in resonance with yellow-luminescence (YL) transitions in GaN
layers grown on sapphire by electron cyclotron resonance-molecular beam epitaxy technique. The photoluminescence ...
Optical transitions and interface structure in (GaP)m/(AlP)n modulated period superlattices
(2004)
We have investigated optical transitions and atomically controlled interface structure in modulated period (GaP)m/(AlP)n (m, n number of monolayers) superlattices (SLs) using low-temperature photoluminescence (PL) and Raman ...
Porous Si formation and study of its structural and vibrational properties
(2002)
In situ current (I)–(V) voltage studies were carried out to get a better understanding of the mechanism of formation of porous silicon (PS). It is observed that on decreasing the anodization current density below a critical ...
Porous Si formation and study of its structural and vibrational properties
(2002)
In situ current (I)–(V) voltage studies were carried out to get a better understanding of the mechanism of formation of porous silicon (PS). It is observed that on decreasing the anodization current density below a critical ...