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Photoluminescence and Raman study of porous silicon synthesized by visible and infrared laser etching
(2001)
Visible and infrared lasers have been used to photochemically fabricate photoluminescent porous silicon thin films on n-type silicon substrates. Photoluminescence measurements on porous silicon exhibit a two-peak structure ...
Surface morphology and formation of GaAs nanocrystals by laser-induced etching: SEM, PL and Raman studies
(2004)
GaAs nanostructures were prepared by a laser-induced etching process using a Nd:YAG (λ=1.06 μm) laser. Scanning electron microscope (SEM) was used to monitor changes in surface morphology produced on etching. The etched ...
Continuous wave laser-induced temperature rise in the thin films of silicon nanocrystals using Raman scattering
(2003)
Continuous wave (CW) laser-induced temperature rise is studied in Raman spectra of nanocrystalline-silicon (nC-Si) films on quartz and sapphire substrates. The zone-center-phonon (ZCP) mode in the Raman spectra shows ...