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Photoluminescence and Raman study of porous silicon synthesized by visible and infrared laser etching
Visible and infrared lasers have been used to photochemically fabricate photoluminescent porous silicon thin films on n-type silicon substrates. Photoluminescence measurements on porous silicon exhibit a two-peak structure ...
Surface morphology and formation of GaAs nanocrystals by laser-induced etching: SEM, PL and Raman studies
GaAs nanostructures were prepared by a laser-induced etching process using a Nd:YAG (λ=1.06 μm) laser. Scanning electron microscope (SEM) was used to monitor changes in surface morphology produced on etching. The etched ...
Continuous wave laser-induced temperature rise in the thin films of silicon nanocrystals using Raman scattering
Continuous wave (CW) laser-induced temperature rise is studied in Raman spectra of nanocrystalline-silicon (nC-Si) films on quartz and sapphire substrates. The zone-center-phonon (ZCP) mode in the Raman spectra shows ...