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Optical transitions and interface structure in (GaP)m/(AlP)n modulated period superlattices
We have investigated optical transitions and atomically controlled interface structure in modulated period (GaP)m/(AlP)n (m, n number of monolayers) superlattices (SLs) using low-temperature photoluminescence (PL) and Raman ...
Surface morphology and formation of GaAs nanocrystals by laser-induced etching: SEM, PL and Raman studies
GaAs nanostructures were prepared by a laser-induced etching process using a Nd:YAG (λ=1.06 μm) laser. Scanning electron microscope (SEM) was used to monitor changes in surface morphology produced on etching. The etched ...