Now showing items 1-5 of 5
A new lateral SiGe-base PNM Schottky collector bipolar transistor on SOI for non-saturating VLSI logic design
A novel bipolar transistor structure, namely, SiGe base lateral PNM Schottky collector bipolar transistor (SCBT) on silicon-on-insulator (SOI) substrate is explored using two-dimensional (2D) simulation. Based on a comparison ...
A novel collector-tub concept for realizing high-voltage lateral bipolar transistors on SOI
Two-dimensional numerical simulation studies of collector-emitter breakdown voltage (BV/sub CEO/) of a novel collector-tub lateral bipolar transistor (CTLBT) on silicon-on-insulator (SOI) are presented. The collector-tub ...
Investigation of the novel attributes of a fully depleted dual-material gate SOI MOSFET
The novel features of a fully depleted (FD) dual-material gate (DMG) silicon-on-insulator (SOI) MOSFET are explored theoretically and compared with those of a compatible SOI MOSFET. The two-dimensional numerical simulation ...
Proposal and design of a new SiC-emitter lateral NPM Schottky collector bipolar transistor on SOI for VLSI applications
A novel bipolar transistor structure, namely, a SiC emitter lateral NPM Schottky collector bipolar transistor (SCBT) with a silicon-on-insulator (SOI) substrate is explored using two-dimensional (2-D) simulation. A ...
Two-dimensional analytical modeling of fully depleted DMG SOI MOSFET and evidence for diminished SCEs
A two-dimensional (2-D) analytical model for the surface potential variation along the channel in fully depleted dual-material gate silicon-on-insulator MOSFETs is developed to investigate the short-channel effects (SCEs). ...