Author: | Thirumal, Meganathan; Jawahar, Isuhak N; Surendiran, Kuzhichalil P; Mohanan, Pezholil; Ganguli, Ashok K |
Advisor: | Advisor |
Date: | 2002
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Publisher: | |
Citation: | Materials
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Series/Report no.: |
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Item Type: | Article
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Keywords: | Ceramics; Electronic materials; Oxides; X-ray diffraction; Dielectric properties |
Abstract: | Oxides of the type, Sr3Zn1−xMgxNb2O9 (0≤x≤1) have been obtained by the ceramic method. These oxides crystallize in the hexagonal cell corresponding to ordered triple perovskites. Sintered disks show nearly frequency-independent dielectric constant for all the compositions. Compositions sintered at 1425°C yield dielectric constant of 20–22 at 6 GHz, with quality factor ranging from 1300 to 1500. Sr3Zn0.5Mg0.5Nb2O9 shows a very low temperature coefficient of resonant frequency (τf) of +4 ppm/°C. |