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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/925

Title: Photoluminescence study of Nd:YAG laser-etched silicon
Authors: Mavi, H S
Rasheed, B G
Shukla, A K
Abbi, S C
Jain, K P
Keywords: photoluminescence
porous silicon
laser-induced etching
nanocrystallites corresponding
laser parameters
Issue Date: 2001
Citation: Journal of Non-Crystalline Solids, 286(3), 162-168
Abstract: Photoluminescence (PL) spectra of porous silicon (PS) samples fabricated with laser-induced etching (LIE) in HF acid are analyzed using a quantum confinement model with an assumption that porous silicon consists of a distribution of nanocrystallites corresponding to the Gaussian function. The mean nanocrystallite size and size distribution parameters are studied here as a function of the laser power density and irradiation time during laser-induced etching. The photoluminescence peak position energy is found to vary between 1.8 and 2 eV as the laser power density or irradiation time of the Nd:YAG laser is varied. Furthermore, the study helps in gaining fresh insight into maximizing the photoluminescence yields from porous silicon by optimizing laser parameters in the etching process.
URI: http://eprint.iitd.ac.in/dspace/handle/2074/925
Appears in Collections:Physics

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